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Atomic and Electronic Structure of Clusters on Silicon Surfaces


The aim of project D is to study the atomic structure and individual electronic properties of clusters formed on silicon surfaces. Such structures may act as building blocks for future larger-scale applications. The clusters are prepared in ultra-high vacuum (UHV) by self-organization using molecular beam epitaxy (MBE), and their atomic structure and individual electronic properties are studied using scanning tunneling microscopy (STM) and spectroscopy (STS).

Based on our recent work on Sb, Dy, and In clusters on Si(111)7x7 (see e. g. the figure) [1,2], we are now focusing on surface clusters containing only one or very few metal atoms and on metals related to the doped silicon gas phase clusters studied in the research group, allowing to compare the influence of the substrate. Furthermore the vibrational properties are derived by in-situ Raman spectroscopy in cooperation within the research group. One- and two-dimensional cluster assemblies are of interest to study the electronic interaction of neighboring clusters. Our findings will be complemented by theoretical calculations performed in the research group. Finally, cluster passivation will be performed by capping in order to stabilize the cluster structures under ambient conditions.


[1] Antimony induced cluster formation on the Si(111)7×7 surface, S. Appelfeller, M. Franz, and M. Dähne, Surf. Sci. 608, 109 (2013).

[2] Formation and atomic structure of self-assembled Dy silicide clusters on the Si(111)-7x7 surface, M. Franz, S. Appelfeller, M. Rychetsky, and M. Dähne, Surf. Sci. 609, 215 (2013).

 For more information, visit the group-homepage.

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