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Raman Laser

For future applications of silicon photonics, it is of high relevance to integrate also light sources into the silicon chip. Due to the semiconductor properties, silicon is not suited as lasing material (indirect band transition). However, the high Raman gain enables silicon as material system for optical Raman amplifiers and Raman lasers. When pumping with a q-switched Nd:YAG-MOPA system, lasing has been demonstrated at temperatures of 10 K in a Si-mono crystal at 1.127 µm. In addition experiments in respect to Raman amplification have been performed in Si waveguides. Using a 160 mW Raman fiber laser at 1454.8 nm, Raman amplification of 0.6 dB in waveguides of width 2 µm, respectively 1 dB in waveguides of width 0.45 µm was observed.      

Lux, O., Rhee, H., Lisinetskii, V. A., Meister, S. et al.: Stimulated Raman scattering and Raman laser operation in silicon single crystals at low temperatures. Laser Physics Letters. 9, 858; 2012.

Rhee, H., Lux, O., Meister, S., Woggon, U., Kaminskii, A. A., Eichler, H. J.: Operation of a Raman laser in bulk silicon. Optics Letters. 36, 1644; 2011.

Mahdi, S., Meister, S., Al-Saadi, A., Franke, B. A. et al.: Raman Scattering And Gain In Silicon-on-insulator Nanowire Waveguides. Journal of Nonlinear Optical Physics & Materials. 21, 1250021; 2012.

Wang, S., Meister, S., Mahdi, S., Franke, B. A. et al.: Spontaneous and stimulated Raman scattering in planar silicon waveguides. Proc. of SPIE Silicon Photonics VI - Photonics West 2011, 7943, 794340; 2011.

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