Inhalt des Dokuments
Wide gap microcrystalline silicon carbide emitter for amorphous silicon oxide passivated heterojunction solar cells
M. Pomaska, A. Richter, F. Lentz, T. Niermann, F. Finger, U. Rau, K.N. Ding
Wide gap microcrystalline silicon carbide emitter for amorphous silicon oxide passivated heterojunction solar cells
Jap. Journal of Appl. Physics 56 (2017) 1-6
Nanoparticle formation of deposited Ag-n-clusters on free-standing graphene
M. Al-Hada, S. Peters, L. Gregoratti, M. Amati, H. Sezen, P. Parisse, S. Selve, T. Niermann, D. Berger, M. Neeb, W. Eberhardt
Nanoparticle formation of deposited Ag-n-clusters on free-standing graphene
Surface Science 665 (2017) 108-113
Gated interference for time-resolved electron holography
T. Niermann, M. Lehmann, T. Wagner
Gated interference for time-resolved electron holography
Ultramicroscopy 182 (2017) 54–61
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Sankaramangalam Ulhas Sharath, Stefan Vogel, Leopoldo Molina-Luna, Erwin Hildebrandt, Christian Wenger, Jose Kurian, Michael Duerrschnabel, Tore Niermann, Gang Niu, Pauline Calka, Michael Lehmann, Hans-Joachim Kleebe, Thomas Schroeder and Lambert Alff
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Adv. Funct. Mater. 27 (2017) 1700432 (13pp)
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties
G. Niu, M.A. Schubert, S.U. Sharath, P. Zaumseil, S. Vogel, C. Wenger, E. Hildebrandt, S. Bhupathi, E. Perez, L. Alff, M. Lehmann, T. Schroeder, and T. Niermann
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties
Nanotechnology 28 (2017) 215702 (7pp)
All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann
All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
Appl.Phys.Lett. 110 (2017) 102104
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