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Publications in Journals / Books 2013

Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM characterization of growth defects

T. Niermann, D. Zengler, L. Tarnawska, P. Stork, T. Schroeder, M. Lehmann
Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM characterization of growth defects
Journal of Applied Physics 113 (2013) 223501
DOI: 10.1063/1.4809561

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Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory

L. Tarnawska, J. Dabrowski, T. Grzela, T.Niermann, M. Lehmann, R. Paszkiewicz, P. Storck, and T. Schroeder
Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory
Journal of Applied Physics 113 (2013) 213507
DOI: 10.1063/1.4807907

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Prof. Dr. Michael Lehmann
+49 (0)30-314 22567
Ernst-Ruska-Gebäude
Room ER 292

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Elke Wandke
+49 (0)30-314 23585
Ernst-Ruska-Gebäude
Room ER 290

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