TU Berlin

Institut für Optik und Atomare PhysikProject C: Structural and Electronic Properties of Doped and Covered Silicon Clusters

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Structural and Electronic Properties of Doped and Covered Silicon Clusters

Structures of Si_nCu+ and Si_nV+ (n = 6-8) whose calculated vibrational spectra fit best the experimental findings.
Lupe

We aim to combine doping and surface modification of silicon clusters to tune their stability and functionality, i.e. the optical properties. This sub-project focuses on the spectroscopic investigation of the geometric and electronic structures of doped and surface modified silicon clusters in the gas-phase. We will apply vibrational spectroscopy for the investigation of the structural properties and anion photoelectron spectroscopy for obtaining insights into the electronic structures. In combination with theory we aim to achieve an understanding for the interplay of modification of the electronic and geometrical structures upon doping and chemical surface alteration.

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